METHOD AND INSTALLATION FOR CORRECTING INTEGRATED CIRCUIT FAULTS WITH AN ION BEAM

摘要

The invention concerns a method and an installation for correcting faults in integrated circuits (14) which consists in using a positive ion beam focused on a surface (23) of the integrated circuit (14) with an incident energy not less than 20 keV for etching and/or depositing without mask, and imaging means (31) by potential contrast from secondary electrons. The invention is characterised in that it consists in generating, directly above the integrated circuit (14) surface (23), a local electric field to prevent cationic species from accumulating on the integrated circuit surface (23) without cancelling the electric field detecting the secondary electrons, and in maintaining said local electric field while the ion beam is being applied on the integrated circuit surface (23).