POLISHED CERAMIC CHUCK FOR LOW BACKSIDE PARTICLES IN SEMICONDUCTOR PLASMA PROCESSING

摘要

A chuck assembly for supporting a semiconductor substrate and a plasma of a processing gas within a reactor chamber. The chuck assembly has a receiving surface for receiving a semiconductor substrate. The receiving surface includes a surface finishing having a peak-to-valley roughness height with an average height value of less than about 1,000A, thereby reducing particle formation during wafer loading or unloading. The chuck assembly includes a chuck member comprising a unitary monolithic dielectric member of ceramic material like ALN or the like. A power electrode may be embedded within the unitary monolithic dielectric member. The surface finish is obtained by polishing.