| 发明名称 |
Fe-RAM arrangement having number of storage cells |
| 摘要 |
Fe-RAM arrangement has a number of storage cells with a selection transistor (2, 3) and a capacitor device made of at least two capacitors (C1, C2) with different coercivity voltages and which are connected to a common storage nodule plug (4). The capacitor is made of ferroelectric dielectrics.
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| 申请公布号 |
DE19830569(C1) |
申请公布日期 |
1999.11.18 |
| 申请号 |
DE19981030569 |
申请日期 |
1998.07.08 |
| 申请人 |
SIEMENS AG |
发明人 |
SCHINDLER, GUENTHER;HINTERMAIER, FRANK;HARTNER, WALTER |
| 分类号 |
G11C11/22;H01L21/8246;H01L27/105;H01L27/115;(IPC1-7):H01L27/105;G11C16/02 |
主分类号 |
G11C11/22 |
| 代理机构 |
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代理人 |
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| 主权项 |
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