GATE TURN-OFF THYRISTOR

摘要

The invention relates to a gate turn-off thyristor in which a series resistor is built in on the cathode side. The series resistor is formed by a perforated insulation coating (8) located between the metallic coating on the cathode side forming the connection contact (6) and the doped semiconductor material of the emitter (4) in the cathode side. The openings (9) in said coating are preferably cylindrical. If the component is made of silicon, the insulation layer is preferably made of SiO2 or Si3N4 or a series of SiO2 and Si3N4 coatings.