Semiconductor element for integrated circuits

摘要

Semiconductor element for integrated circuits consists of: a substrate formed as an elevation in a trench structure of a base body; doped regions embedded as cathode and anode regions in the elevations with a channel region formed between the cathode zone and the anode zone; a first electrode arranged over the channel region and separated from the elevation by an insulating layer. The electrode covers parts of the sidewall and surface of the elevation. An Independent claim is also included for a process for producing the semiconductor element.