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发明名称
Verfahren zur Herstellung einer Halbleiterdünnschicht und damit hergestellte Halbleiterdünnschicht
摘要
申请公布号
DE69033153(T2)
申请公布日期
1999.11.11
申请号
DE1990633153T
申请日期
1990.03.30
申请人
CANON K.K., TOKIO/TOKYO
发明人
YONEHARA, TAKAO
分类号
H01L21/20;(IPC1-7):H01L21/20
主分类号
H01L21/20
代理机构
代理人
主权项
地址
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