| 摘要 |
The invention relates to an MOS power transistor with a semiconductor body (1) corresponding to one type of conductivity, at least one trough-shaped area (2) embedded in a first surface of the semiconductor body corresponding to another type of conductivity that is opposite to that of the first, a source zone provided in the trough-shaped area (2) corresponding to one type of conductivity, a metallic coating (4) contacting the trough-shaped area (2) and a drain-metallic coating (7) provided on a second surface of the semiconductor body (1) opposite the first surface of the semiconductor body (1). The drain-metallic coating forms a Schottky contact with the semiconductor body (1), whereby the barrier height of said Schottky contact can be adjusted. An area that corresponds to the second type of conductivity and consists of a plurality of floating areas (18) is provided in the semiconductor body. |
