| 摘要 |
<p>A silicon semiconductor wafer made of a silicon single crystal grown by the Czochralski method by using molten silicon containing nitrogen at a concentration of 1x1016 atoms/cm3 to 5x1019 atoms/cm3 and by heat treating the wafer at a temperature of 1000 °C to 1300 °C for more than one hour, characterized in that the density of crystal defects having a size of above 0.1 νm in terms of diameter in the region extending at least to the depth of 1 νm from the surface of the wafer is 104 cm-3 or less, and the content of nitrogen at the center in the direction of the thickness of the wafer ranges from 1x1013 atoms/cm3 to 1x1016 atoms/cm3.</p> |
