| 摘要 |
<p>A semiconductor laser device and method of forming the device is described. The semiconductor laser device is a separate confinement quantum well diode laser for which highly strained compounds are employed as a material for each quantum well. A first device structure includes a quantum well composition range extended from strained ternary compounds employed in conventional quantum well laser devices. A second device structure, employing a similar structure to that of the first device, employs new quasi-ternary compounds for quantum wells in GaSb- or InAs-based laser devices which extend performance of mid-infrared laser devices operating in the 2.2-4.0 νm range.</p> |
