| 发明名称 |
Verfahren zur Herstellung eines Si-O beinhaltenden Überzuges |
| 摘要 |
<p>Disclosed is a method for forming improved Si-O containing coatings on electronic substrates. The method comprises treating Si-O containing ceramic coatings derived from hydrogen silsesquioxane resin with hydrogen gas. The resultant coatings have improved properties such as stable dielectric constants.</p> |
| 申请公布号 |
DE69416767(T2) |
申请公布日期 |
1999.11.11 |
| 申请号 |
DE1994616767T |
申请日期 |
1994.09.16 |
| 申请人 |
DOW CORNING CORP., MIDLAND |
发明人 |
BALLANCE, DAVID STEPHEN;DUNN, DIANA KAY;CAMILLETTI, ROBERT CHARLES |
| 分类号 |
C01B33/113;C01B33/00;C04B35/04;H01L21/3105;H01L21/316;(IPC1-7):H01L21/310 |
主分类号 |
C01B33/113 |
| 代理机构 |
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代理人 |
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