OXIDE/ORGANIC POLYMER MULTILAYER THIN FILMS DEPOSITED BY CHEMICAL VAPOR DEPOSITION

摘要

Multilayer thin films of alternating layers of oxide and organic polymer dielectric materials are manufactured by chemical vapor deposition using a CVD apparatus comprising separate precursor volatilization/dissociation areas. The apparatus (100) consists of a common deposition chamber (122) whose pressure was monitored by a pressure gauge (130) and reduced by a pump (134) and vaporization chambers for the SiO2 precursor (112) and the polymer precursor (102). Methods are described for the manufacture of multilayered films. The electrical properties of the multilayered films make the films of embodiments of this invention suitable for use as dielectric materials for semiconductor manufacture. The multilayered films of embodiments of this invention reduce RC delay and cross-talk, thereby permitting increased density, higher frequency performance and greater reliability of semiconductor devices for use in the electronics industry.