| 摘要 |
<p>A method and apparatus for depositing a titanium containing layer on a semiconductor substrate employing high density plasma processing techniques. The titanium source includes a TiCl4 gas (96a) which is flowed into a process chamber along with an inert gas source (98a), such as argon and a flow of hydrogen gas. A plasma is present in the process chamber where the semiconductor substrate is situated. The apparatus includes a dome-shaped cover which forms part of the process chamber. The cover includes an aperture (96) centrally disposed therein and is adapted to produce a flow of TiCl4 gas that is directed substantially transverse to the semiconductor substrate, with a portion of the flow of hydrogen gas (98a) and the inert gas source positioned between the cover and the flow of TiCl4 gas.</p> |
