Semiconductor sensor for a dynamic parameter, e.g. an accelerometer manufacture method

摘要

The method involves producing a semiconducting substrate (14) with first (14b) and second (14a) semiconducting regions separated by an insulating layer (14c). A movable part is formed in the first semiconducting region by etching both semiconducting regions. The movable part is defined in a step whereby it is formed in a gas phase atmosphere following etching in both semiconducting regions. An Independent claim is also included for a semiconducting sensor for a dynamic parameter.