| 发明名称 |
Verfahren zur Herstellung von Mustern |
| 摘要 |
A pattern forming method comprises subjecting a surface of a semiconductor substrate to surface treatment for imparting hydrogen atoms, irradiating a desired region of said surface with an energy ray, selectively forming a metal film on a non-irradiated region other than the desired region, and etching said semiconductor substrate using said metal film as a mask. <IMAGE> |
| 申请公布号 |
DE69326651(D1) |
申请公布日期 |
1999.11.11 |
| 申请号 |
DE1993626651 |
申请日期 |
1993.07.29 |
| 申请人 |
CANON K.K., TOKIO/TOKYO |
发明人 |
SEKINE, YASUHIRO;MOMMA, GENZO;YUZURIHARA, HIROSHI |
| 分类号 |
G03F1/68;G03F1/80;G03F7/004;G03F7/20;H01L21/033;H01L21/263;H01L21/285;H01L21/302;H01L21/3065;H01L21/308;H01L21/321 |
主分类号 |
G03F1/68 |
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