| 摘要 |
High electric power switching device comprises a layer of intrinsic diamond and a layer of doped semiconductor material. DETAILED DESCRIPTION - The device comprises a first layer of intrinsic diamond and a second layer of doped semiconductor between the first layer and a device terminal. The material of the second layer, preferably silicon, has a considerably smaller bandgap than the diamond layer. The diamond has recombination centres having energy levels separated by a greater distance than the second layer bandgap, so that multiple step electron-hole recombinations take place in the diamond layer generating free charge carriers with the device in the conducting state, the device being in a blocking state if a reverse voltage is applied across the terminals. |
