发明名称 Process and apparatus for growing single crystals
摘要 <p>In a process for semiconductor single crystal prodn. by the Czochralski method employing a magnetic field which acts on the melt in a rotatable quartz glass crucible during crystal growth, the magnetic field is generated by superimposing static and alternating magnetic fields. Also claimed is an appts. for carrying out the above process, the appts. having a vessel which is equipped with resistance heater surrounding a melt-filled crucible, a single crystal pulling device and a magnetic device for generating a magnetic field in the melt. The novelty is that the magnetic device comprises two coils surrounding the crucible, one coil generating a static magnetic field and the other coil generating an alternating magnetic field, and is pref. surrounded by a ring of magnetic material.</p>
申请公布号 EP0758689(B1) 申请公布日期 1999.11.10
申请号 EP19960112765 申请日期 1996.08.08
申请人 WACKER SILTRONIC GESELLSCHAFT FUER HALBLEITERMATERIALIEN AKTIENGESELLSCHAFT 发明人 TOMZIG, ERICH, DR.;ZULEHNER, WERNER, DR.;VON AMMON, WILFRIED, DR.;GELFGAT, YU M., PROF. DR.;GORBUNOV, L.A., DR.
分类号 C30B15/04;C30B15/30;C30B29/06;C30B30/04;H01L21/208;(IPC1-7):C30B15/00 主分类号 C30B15/04
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