发明名称 Electron-emitting device and production method thereof
摘要 An electron-emitting device disclosed has stable electron emission characteristics with little variation, in high electron emission efficiency, in high definition, and at low driving voltage. The electron-emitting device disclosed is constructed in such structure that on a substrate 1 there are a lower electrode 2, an insulating layer 3 having pores 5, and an upper electrode 4 stacked in this order, the insulating layer 3 is an anodic oxide layer, and a carbon deposit is formed in the pores 5. <IMAGE>
申请公布号 EP0923104(A3) 申请公布日期 1999.11.10
申请号 EP19980309343 申请日期 1998.11.13
申请人 CANON KABUSHIKI KAISHA 发明人 YAMANOBE, MASATO;TSUKAMOTO, TAKEO;KAWATE, SHINICHI
分类号 H01J1/30;H01J1/304;H01J1/312;H01J1/316;H01J9/02;H01J29/04;H01J31/12;H01J31/38 主分类号 H01J1/30
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