| 摘要 |
PURPOSE: To simplify confirmation work of position deviation of mutual alignment marks. CONSTITUTION: When a second reticle 10 is positioned above a silicon substrate 4 in which first patterns are formed, alignment marks 12 on the second reticle 10 are positioned as a form concentrated at a central side of matrix arrangement of the first patterns. Since dimension from an end of the first pattern to the outer peripheral part of the alignment mark 12 of the second reticle 10 is comparatively lengthened, position deviation of the pattern and the mark is easily inspected by using visual observation or a simple microscope. |
