| 摘要 |
A probing device for inspecting semiconductor devices such as IC chips comprises a mounting section for supporting a silicon substrate wafer (i.e., an object to be inspected), a moving section for moving a probe card in such a way that contacts formed on a surface of the probe card can be pushed against electrode pads formed on the wafer, and a measuring section. The probe card is formed by joining a silicon nitride (Si3N4) thin film (whose thermal expansion coefficient is roughly equal to that of the silicon wafer) to a lower surface of a wiring substrate. The wiring substrate is composed of a polyamide thin film (as an insulating layer) and conductive layers (as conductive signal line paths) formed in and on both the surfaces of the polyamide this film. Further, bumps (contacts) are arranged on the lower surface of the silicon nitride thin film. A plurality of through holes are formed penetrating from the upper surface of the wiring substrate to the lower surface of the silicon nitride film at an area outside the bump arrangement region. These through holes mechanically connect the silicon nitride thin film to the wiring substrate and further electrically connect the bumps to the circumferential portion of the probe card body via the conductive layers. Since the thermal expansion coefficient of the silicon wafer is roughly equal to that of the silicon nitride thin film of the probe card, even when the silicon wafer is heated or cooled for electrical measurements, it is possible to securely keep contact between the contacts (bumps) of the probe card and the electrode pads formed on the IC chips of the wafer without dislocation.
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