发明名称 |
Method of making a semiconductor component with compensation implantation |
摘要 |
A semiconductor component, in particular an EEPROM, and a production method therefor, avoid an avalanche breakdown from a buried channel to a substrate through the use of a special lateral dopant profile in the buried channel, in which a peripheral zone of the buried channel has a higher effective doping than a region located below a tunnel window. The lateral dopant profile is produced through the use of a compensation implantation with dopant atoms of the conduction type opposite that of the buried channel.
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申请公布号 |
US5981342(A) |
申请公布日期 |
1999.11.09 |
申请号 |
US19970858819 |
申请日期 |
1997.05.19 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
KAKOSCHKE, RONALD;SEDLAK, HOLGER |
分类号 |
H01L21/8247;H01L21/336;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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