发明名称 Method for producing a device having a chromium layer
摘要 Chromium layers are deposited on a substrate by means of a sputter deposition process. By using neon as the working gas at pressures of less than 1 Pa, preferably in the range from 0.2 Pa to 0.5 Pa, the sputter-deposited chromium layers are substantially free of internal stress and have a density which is approximately equal to that of bulk chromium.
申请公布号 US5981389(A) 申请公布日期 1999.11.09
申请号 US19970977949 申请日期 1997.11.25
申请人 U.S. PHILIPS CORPORATION 发明人 VINK, TEUNIS J.;WALRAVE, WILLEM
分类号 C23C14/34;C23C14/16;C23C14/18;C23C14/54;H01L21/28;H01L21/283;H01L21/285;H01L21/3205;H01L23/52;H01L29/45;(IPC1-7):H01L21/44 主分类号 C23C14/34
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