| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing high-purity carbide-based ceramics, capable of baking at a high temperature without lowering purity of a ceramics curing backing. SOLUTION: Powder or molded product 1 of silicon carbide-based composition or boron carbide-based composition in which total amount of metals of Al, Fe, Ti, Ca and Mg is <=5 ppm is put in a carbon casing 3 or carbon mold and baked especially at <=2,000 deg.C to stably prepare high-purity silicon carbide- based or boron carbide-based ceramics containing <=5 ppm total amount of metal in good reproducibility. Then, the ceramics are applied to part items for semiconductor-producing apparatus such as inside wall material used in a halogen plasma. |
