发明名称 Method of making field emitters with porous silicon
摘要 A process is provided for forming sharp asperities, useful as field emitters. The process comprises: patterning and doping a silicon substrate. The doped silicon substrate is anodized. The anodized area is then used for field emission tips. The process of the present invention is also useful for low temperature sharpening of tips fabricated by other methods. The tips are anodized, and then exposed to radiant energy, and the resulting oxide is removed.
申请公布号 US5981303(A) 申请公布日期 1999.11.09
申请号 US19970895523 申请日期 1997.07.17
申请人 MICRON TECHNOLOGY, INC. 发明人 GILTON, TERRY L.
分类号 H01J9/02;H01L21/00;H01L21/306;(IPC1-7):H01L21/306 主分类号 H01J9/02
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