| 摘要 |
An InP-based MQW-laser for the 1.3 mu m band has at least one, preferably several, well layers sandwiched between barrier layers having larger band gaps. The well layers and the barrier layers both have essentially the same content composition of group-III elements, but different content compositions of group-V elements. The well layers have lattice constants which deviate from the substrate within the limits of possible voltages, so-called mismatching, whereas the well layers have a smaller mismatch. |
