| 摘要 |
PROBLEM TO BE SOLVED: To decrease the threshold of a laser element for use of a nitride semiconductor laser element at high output. SOLUTION: On a first main surface of a nitride semiconductor substrate 1 comprising first and second main surfaces, at least an n-type nitride semiconductor layer, an active layer 5, and a p-type nitride semiconductor layer are sequentially laminated, a p-electrode 20 is formed on the p-type nitride semiconductor layer side, and an n-electrode 21 is formed on the second main surface side of the nitride semiconductor substrate 1. Here, the p-type nitride semiconductor layer comprises a p-side clad layer 8 and a p-side contact layer 9 provided on the p-side clad layer 8, and a stripe-like waveguide region formed by removing a part of the nitride semiconductor from the p-side contact layer 9 side is formed, while the flat surface of nitride semiconductor continuous with both side surfaces of the stripe positioned closer to substrate side by at least about 0.2 μm in the p-side contact layer 9 direction from the lower end surface, in the film thickness direction of the p-side clad layer 8. |
