发明名称 |
Method for manufacturing III-V semiconductor layers containing nitrogen |
摘要 |
A method for manufacturing III-V semiconductor layers containing nitrogen whereby during the growth of the layers, the setting of the material sources for Al, In and Ga remains fixed. During the transition to the growth of a layer with another mixed-crystal composition, the nitrogen flow is altered. A greater nitrogen flow leads to an increased installation of the more weakly bound group III elements into the growing material.
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申请公布号 |
US5980631(A) |
申请公布日期 |
1999.11.09 |
申请号 |
US19970992182 |
申请日期 |
1997.12.17 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
TEWS, HELMUT;SCHIENLE, MEINRAD;AVERBECK, ROBERT |
分类号 |
C30B29/38;H01L21/20;H01L21/203;H01L33/00;H01S5/323;(IPC1-7):C30B23/00 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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