Multiple peak resonant tunneling diode

摘要

A multiple peak resonant tunneling diode (10) includes multiple vertical semiconductor structures (12, 13). The vertical structures (12, 13) include a resonant tunneling diode having a predetermined cross-sectional area and a series resistor of a predetermined resistance. The vertical structures (12, 13) are spaced from one another and interconnected in parallel. Additionally, the vertical semiconductor structures (12, 13) are fabricated such that their predetermined diode cross-sectional areas and series resistances have values that vary by predetermined amounts to adjust the respective peak currents and/or peak voltages of the vertical semiconductor structures (12, 13).