| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to prevent deterioration, by transition metals, in the performance of semiconductor devices produced by a process by including a stage for removing resist patterns by an oxygen plasma after a stage for etching substrates or a stage for implanting ions. SOLUTION: This process includes at least a stage for forming coating films consisting of a photosensitive compsn. on the prescribed substrate, a stage for forming the latent images of the desired patterns in this coating film, a stage for developing the desired patterns in the coating film by using an aq. alkaline developer and the stage for etching the substrate in accordance with the resist patterns or the stage for implanting the ions. The base resin component derived from a polymer polymerized by a catalyst contg. at least ruthenium is used for the base resin component of the photosensitive compsn. Further, the stage for removing the resist pattern by the oxygen plasma is included after the stage for etching the substrate or the stage for implanting the ions. |
