| 摘要 |
PURPOSE:To reduce the increase in the masking steps to twice and to obtain a protecting diode having large protecting capacity by forming a Schottky diode of vertical structure on an insulating substrate. CONSTITUTION:The first amorphous silicon layer 2 including n type impurity is, for example, selectively covered on an insulating substrate 1. Then, the second amorphous silicon layer 3 is selectively covered. After the first metal layer 4 is covered on the overall surface, a nitrided silicon film 5 is selectively covered and formed. The first metal layer 4 is connected to a metal electrode 6, and a plasma anodic oxidation is performed, thereby forming a metal oxide 7. Subsequently, the film 5 and the first metal layer are removed to partly expose the layers 2, 3. The first layer 2 is formed in an ohmic electrode with the second layer 8, and the layer 3 is contacted with a rectifying electrode 9 made of the second metal. |
