| 摘要 |
PROBLEM TO BE SOLVED: To prevent the shot-channel effect, which is generated in the high- concentration deep bonding region, by respectively diffusing the first, second and third impurity-ion layers by heat treatment, and forming the low- concentration shallow bonding region, the high-concentration deep bonding region and the shallow concentration density of the high concentration between these regions. SOLUTION: A low-concentration shallow n-type bonding region 108a is formed in a semiconductor substrate 100 at both sides of a gate electrode layer 106a. Furthermore, the high-concentration shallow n-type bonding region 108a is formed at the depression angle from the low-concentration n-type bonding region 108a in the semiconductor substrate 100 on both sides of a spacer 110a. Furthermore, a high-concentration deep n-type bonding region 116a is formed relatively deeper than the high-concentration shallow n-type region 118a in the semiconductor substrate 100 having the distance of certain degree from the spacer 110a. Furthermore, an insulating film 124 includes a gate electrode layer 106 and is formed on the semiconductor substrate 100. Then, a metal contact 126 has the hole in the insulating film 124 and electrically connected to the high-concentration deep n-type bonding region. |
