发明名称 |
Method for chemical-mechanical planarization of stop-on-feature semiconductor wafers |
摘要 |
The present invention is a method for chemical-mechanical planarization of semiconductor wafers that is highly useful for planarizing stop-on-feature design wafers. Initially, the wafer is positioned against a liquid solution over a planarizing surface of a polishing pad. At least one of the wafer or the pad is moved with respect to the other at a relatively low velocity to maintain a substantially continuous film of liquid solution between the wafer and the pad. The temperature of a pad platen is also controlled to maintain a relatively low temperature of the liquid solution at which the solution is highly selective to a layer of material on the wafer.
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申请公布号 |
US5981396(A) |
申请公布日期 |
1999.11.09 |
申请号 |
US19990287953 |
申请日期 |
1999.04.07 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
ROBINSON, KARL M.;WALKER, MICHAEL A. |
分类号 |
B24B37/00;B24B37/04;B24B49/14;H01L21/304;H01L21/3105;(IPC1-7):H01L21/00 |
主分类号 |
B24B37/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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