LUMINESCENT MATERIAL, PRODUCTION THEREOF, AND LUMINESCENT ELEMENT PREPARED BY USING THE SAME

摘要

PROBLEM TO BE SOLVED: To produce a luminescent material which can be produced directly on a semiconductor substrate and has a high luminescence efficiency, controllable luminescence wavelengths, and a high luminescence decay rate and a luminescent element by using the material. SOLUTION: This luminescent material is produced by dispersing silicone (or germanium) microcrystal particles 12 having particle sizes of nm order in the form of dots in silicon nitride polycrystals 13. The silicon nitride polycrystals 13 and silicon (or germanium) microcrystal particles 12 are deposited alternately on a semiconductor substrate 16 at 600-900 deg.C by a vacuum chemical vapor deposition method or by a chemical vapor deposition method. After the deposition, the semiconductor substrate 16 is pref. annealed in a vacuum, in an inert atmosphere, or in an atmosphere contg. hydrogen at 700-1,500 deg.C. A luminescent element is prepd. by installing an electrode with this luminescent material as a luminescent layer on a semiconductor substrate.