发明名称 |
Semiconductor laminating structure |
摘要 |
To provide a semiconductor laminating structure in which an epitaxial growth of a GaN system material is achieved on a substrate with an excellent matching property with the substrate. The semiconductor laminating structure includes the substrate having a perovskite structure and at least one GaN system chemical compound semiconductor layer formed on the substrate, wherein a major surface of the substrate is formed of a (111) crystal surface.
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申请公布号 |
US5981980(A) |
申请公布日期 |
1999.11.09 |
申请号 |
US19970839903 |
申请日期 |
1997.04.18 |
申请人 |
SONY CORPORATION |
发明人 |
MIYAJIMA, TAKAO;BELLEGO, YANN LE;KAWAI, HIROJI |
分类号 |
H01L29/201;H01L29/812;H01L33/00;H01L33/16;(IPC1-7):H01L33/00 |
主分类号 |
H01L29/201 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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