发明名称 |
Method of forming a T-shaped gate |
摘要 |
The specification describes methods for making T-shaped metal gates for Schottky gate devices such as MESFETs and HEMTs. The method uses a bi-level photoresist technique to create a T-shaped feature for the gate structure. The metal gate is evaporated into the photoresist T-shaped feature and a lift-off process is used to remove unwanted metal. The photoresist is the dissolved away leaving the T-shaped gate. An important aspect of the process is the use of a plasma treatment of the first patterned resist level to harden it so that it is unaffected by the subsequent deposition and patterning of the second level resist.
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申请公布号 |
US5981319(A) |
申请公布日期 |
1999.11.09 |
申请号 |
US19970935121 |
申请日期 |
1997.09.22 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
LOTHIAN, JAMES ROBERT;REN, FAN |
分类号 |
H01L21/027;H01L21/285;H01L21/335;H01L21/338;H01L29/423;H01L29/778;H01L29/812;(IPC1-7):H01L21/338 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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