| 发明名称 |
Methods of treating crystal-grown wafers for surface defect analysis |
| 摘要 |
Methods of treating wafers for analyzing defects present therein comprise providing wafers having front side surfaces comprising defective portions and a back side surfaces opposite thereto; and decorating the defective portion of the front side of the wafer with copper.
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| 申请公布号 |
US5980720(A) |
申请公布日期 |
1999.11.09 |
| 申请号 |
US19970977639 |
申请日期 |
1997.11.24 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, JUNG-MIN;PARK, JAE-GUN;LEE, GON-SUB;KIM, GI-JUNG |
| 分类号 |
G01N23/18;G01N1/28;G01N1/32;G01N21/95;H01L21/66;(IPC1-7):C25D5/02;C25D5/00;C25D7/12;B32B35/00 |
主分类号 |
G01N23/18 |
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代理人 |
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