发明名称 Amplifier circuit of latch type which is used for semiconductor memory device
摘要 An amplifier circuit of the present invention comprises first and second signal lines transferred data from a memory cell, first and second nodes, a latch circuit coupled between the first and second nodes, a first MOS transistor coupled between the first signal line and the first node, and a second MOS transistor coupled between the second signal line and the second node.
申请公布号 US5982689(A) 申请公布日期 1999.11.09
申请号 US19970962659 申请日期 1997.11.03
申请人 NEC CORPORATION 发明人 TAKAHASHI, HIROYUKI
分类号 G11C11/419;G11C7/06;(IPC1-7):G11C7/00 主分类号 G11C11/419
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