发明名称 |
Multi-layered structure for ohmic electrode fabrication |
摘要 |
An ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics is disclosed. A non-single crystal InAs layer, Ni film, WSi film and W film are sequentially deposited on an n+-type GaAs substrate by sputtering, etc. and subsequently patterned by lift-off, etc. to make a multi-layered structure for fabricating ohmic electrodes. The structure is then annealed first at, e.g. 300 DEG C. for 30 minutes and next at, e.g. 650 DEG C. for one second to fabricate an ohmic electrode.
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申请公布号 |
US5982036(A) |
申请公布日期 |
1999.11.09 |
申请号 |
US19970979413 |
申请日期 |
1997.11.26 |
申请人 |
SONY CORPORATION |
发明人 |
UCHIBORI, CHIHIRO;MURAKAMI, MASANORI;OTSUKI, AKIRA;OKU, TAKEO;WADA, MASARU |
分类号 |
H01L21/28;H01L21/203;H01L21/265;H01L21/285;H01L21/337;H01L21/338;H01L29/08;H01L29/45;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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