Method of forming a high load resistance type static random access memory cell

摘要

The present invention is related to a high load resistance (HLR) type static random access memory (SRAM) which is small enough to have a profit in device integration. The present invention also provides an SRAM cell, which is easy to convert the thin film transistor (TFT) type SRAM cell into the HLR type SRAM as occasion calls. A high load resistance type static random access memory cell according to the present invention has four polysilicon layers and two metal lines, this is similar to a conventional TFT type SRAM cell. One layer of the four polysilicon layers is used for a high load resistance element and a power line according to the amount of the impurity implanted in the polysilicon layer.