| 摘要 |
PROBLEM TO BE SOLVED: To find out a condition capable of reducing charge-up quantity on the surface of a resist film, to suppress the deterioration of plotting position accuracy due to charge-up on the surface of the resist film, and to reduce the dispersion of connection accuracy and superposition accuracy of lithography on the wafer surface by an EB direct plotter, having an electrostatic chuck stage. SOLUTION: A semiconductor integrated circuit device manufacturing method, provided with a process for irradiating a resist film 12 formed on a substrate 11 and allowed to be exposed to an electron beam with an electron beam 14 and forming a resist pattern by utilizing the difference of dissolving speeds in a development solution between an exposed part exposed by the electron beam 14, and an unexposed part is also provided with a process for determining d, Q,ε, and S capable of minimizing V by using a relation expressed by the equation V=(d.Q)/(ε.S). Provided that a potential difference between the surface of the resist film 12 and the substrate 11 is V, the film thickness of the film 12 is (d), the surface charge quantity accumulated on the surface of the film 12 is Q, the dielectric constant of the film 12 isε, and the irradiated area of an electron beam is S.
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