| 摘要 |
<p>PROBLEM TO BE SOLVED: To surely prevent unintended information losses with a simple method by providing the control unit designed so as to perform the supplying of a programming voltage needed in order to programming memory cells via source lines. SOLUTION: In a memory cell, a selection transistor T2 is connected in series in the source side of a memory transistor 1, a selection line is connected to the gate part SG of the selection transistor T2, a word line WL is connected to the control gate part CG of the memory transistor T1, a bit line BL is connected to the drain part of the transistor T1 and a source selection line SL is connected to the source part of the transistor T2. Thus, the programming voltage is supplied to the cell via the source line SL and a voltage to be impressed on the cell via the bit line BL can be made to be a very low voltage and a fear bringing about a charge change at the floating gate of the transistor T1 is eliminated.</p> |
