| 摘要 |
PROBLEM TO BE SOLVED: To protect an Al wiring against corrosion, when a fluorine-containing insulating film is used. SOLUTION: An Al layer 2 is formed into an Al wiring 2a by etching using a photoresist 5 as a mask (a), (b). In this process, a natural oxide film 6 is formed on the sidewall of the Al wiring 2a (b). As the natural oxide film 6 is formed at the same time when the Al layer 2 is etched, chlorine gas contained in an etching gas or carbon contained in a photoresist material is mixed into aluminum oxide, and as a result, a superior aluminum oxide film which is uniform in composition is not formed. Then, the natural oxide film 6 formed on the sidewall is removed by physical etching with the use of an inert gas such as argon or the like under vacuum or in an oxygen-free atmosphere or by reactive etching with BCl3 or the like (c). Succeedingly, in a vacuum, oxygen or oxygen radical is introduced, whereby a superior aluminum oxide film 6a is formed on the sidewall of the Al wiring (d). A fluorine-containing insulating film 7 is formed on the Al wiring 2a, on which the superior aluminum oxide film 6a is formed as a barrier (e). |
