发明名称 Internal voltage generation circuit that down-converts external power supply voltage and semiconductor device generating internal power supply voltage on the basis of reference voltage
摘要 An internal voltage-down power supply circuit includes a voltage-down circuit, a comparator circuit (current mirror amplifier), and a current source control circuit. The comparator circuit (current mirror amplifier) includes a current source (NMOS). When an external power supply voltage is increased, the current source control circuit reduces a control voltage applied to the gate of the current source to reduce the current from the current source. When the temperature becomes lower, the current source control circuit reduces the control voltage applied to the gate of the current source to reduce the current from the current source. Therefore, the closed loop gain of the internal voltage-down power supply circuit can be suppressed from increasing, and unnecessary oscillation of the internal power supply voltage can be prevented even when the external power supply voltage is increased and the temperature during operation is low.
申请公布号 US5982162(A) 申请公布日期 1999.11.09
申请号 US19970780909 申请日期 1997.01.09
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 YAMAUCHI, TADAAKI
分类号 G11C11/413;G05F1/46;G05F3/24;G05F3/26;G11C11/407;H02M3/07;H03K19/00;(IPC1-7):G05F3/16 主分类号 G11C11/413
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