发明名称 Process for using a removeable plating bus layer for high density substrates
摘要 A method of electroplating a high density integrated circuit (IC) substrate using a removable plating bus including the steps of providing an IC substrate made of nonconductive material having a plurality of conductive traces formed on its surface. Attaching a removable plating bus to the IC substrate, covering the plurality of conductive traces. Forming through holes (or vias) in predetermined locations. The holes going through the removable plating bus and IC substrate, exposing edges of selected conductive traces in the holes. Plating the through holes with a conductive material (such as copper) that electrically connects the removable plating bus to the exposed edges of the traces in the holes. Coating the IC substrate (including the removable plating bus) with plating resist and selectively removing portions of the removable plating bus, along with the plating resist, to expose selected areas of traces on the IC substrate that require plating. Electroplating the exposed trace areas on the IC substrate with conductive material (such as gold or nickel) by using the removable plating bus as the electrical connection to the exposed metal traces and removing the removable plating bus after electroplating is finished.
申请公布号 US5981311(A) 申请公布日期 1999.11.09
申请号 US19980104838 申请日期 1998.06.25
申请人 LSI LOGIC CORPORATION 发明人 CHIA, CHOK J.;LIM, SENG SOOI;VARIOT, PATRICK
分类号 H01L21/48;H05K3/24;H05K3/42;(IPC1-7):H01L21/58;H01L21/28;H01L21/304 主分类号 H01L21/48
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