| 发明名称 |
Formation of a metalorganic compound for growing epitaxial semiconductor layers |
| 摘要 |
PCT No. PCT/GB95/02089 Sec. 371 Date Jul. 14, 1997 Sec. 102(e) Date Jul. 14, 1997 PCT Filed Sep. 4, 1995 PCT Pub. No. WO96/07661 PCT Pub. Date Mar. 14, 1996Semiconductor devices are prepared by growth of epitaxial layers on a substrate from metalorganic compounds of the formula MR3, R being an alkyl group, or its amine adduct. The metalorganic compound was prepared by reacting a Grignard reagent with a metal halide in an amine solvent.
|
| 申请公布号 |
US5980978(A) |
申请公布日期 |
1999.11.09 |
| 申请号 |
US19970793810 |
申请日期 |
1997.07.14 |
| 申请人 |
THE SECRETARY OF STATE FOR DEFENCE IN HER BRITANNIC MAJESTY'S GOVERNMENT OF THE UNITED KINGDOM OF GREAT BRITAIN AND NORTHERN IRELAND OF DEFENCE EVALUATION AND RESEARCH AGENCY |
发明人 |
JONES, ANTHONY COPELAND;RUSHWORTH, SIMON ANDREW;MARTIN, TREVOR;WHITTAKER, TIMOTHY JOHN;FREER, RICHARD WILLIAM |
| 分类号 |
C07F5/00;C07F9/50;C23C16/18;C30B25/02;C30B29/40;H01L21/203;H01L21/205;(IPC1-7):C23C16/18 |
主分类号 |
C07F5/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
