| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon nitride structural member having high thermal conductivity and high heat dissipation as well as high strength characteristics inherently retained by a sintered silicon nitride body and to provide a semiconductor package using the same structural member. SOLUTION: This silicon nitride structural member having high thermal conductivity comprises a silicon nitride particles and grain boundary phase in which the volume content of crystalline compound phase is >=20% based on the whole of the grain boundary phase, a porosity is <=1.5 vol.% and a thermal conductivity is >=60 W/(m.K). The semiconductor package 9 is equipped with a ceramics substrate 1 mounted by a semiconductor chip 2, a lead frame 5 coupled with the substrate 1 on its side mounted by the chip 2 and bonding wires for electrically linking the chip 2 with a frame 5, wherein the ceramics substrate 1 is made of the silicon nitride structural member having high thermal conductivity. |
