发明名称 ORGANOMETALLIC VAPOR DEPOSITION DEVICE AND METHOD THEREOF, AND COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE
摘要 PROBLEM TO BE SOLVED: To determine condition in a vapor deposition chamber, by installing an evacuation means exhausting the intermediate chamber between the vapor deposition chamber and a quadrupole mass spectrometer, and mounting a means controlling the pressure of the intermediate chamber. SOLUTION: The organometallic vapor deposition device has a vapor deposition chamber 1. A resistance heater 3 heating a substrate 2, a thermocouple 4 measuring the temperature of the substrate 2, and a pressure sensor 5 for monitoring the internal pressure of the vapor deposition chamber 1, are set up into the vapor deposition chamber 1. An intermediate chamber 22 is fitted between such a vapor deposition chamber 1 and a quadrupole mass spectrometer as a partial-pressure measuring device 23 monitoring gas partial pressure in the vapor deposition chamber 1, the intermediate chamber 22 is exhausted by a turbo-molecular pump 25 as an evacuation means, and the pressure of the intermediate chamber 22 is controlled by controlling the opening and closing of a plurality of variable valves 20 and a variable slit 21 by a control signal from a pressure sensor 24.
申请公布号 JPH11312645(A) 申请公布日期 1999.11.09
申请号 JP19980117949 申请日期 1998.04.28
申请人 SHARP CORP 发明人 OKUBO NOBUHIRO;ATSUNUSHI FUMIHIRO
分类号 C23C16/52;H01L21/205;H01L33/30;H01S5/00 主分类号 C23C16/52
代理机构 代理人
主权项
地址