发明名称 Semiconductor device and method for manufacturing the same
摘要 A semiconductor device includes a semiconductor substrate having a main surface, and a multi-layered wiring layer formed on the main surface of the semiconductor substrate, the multi-layered wiring layer having a plurality of wiring layers insulatively laminated, wherein the melting points of the plurality of wiring layers are set gradually lower in a direction towards the higher-level side.
申请公布号 US5982040(A) 申请公布日期 1999.11.09
申请号 US19970970199 申请日期 1997.11.14
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 YAMADA, MASAKI;ANAND, MINAKSHISUNDARAN BALASUBRAMANIAN;SHIBATA, HIDEKI
分类号 H01L21/3205;H01L23/52;H01L23/532;(IPC1-7):H01L23/48;H01L29/40 主分类号 H01L21/3205
代理机构 代理人
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