发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
A semiconductor device includes a semiconductor substrate having a main surface, and a multi-layered wiring layer formed on the main surface of the semiconductor substrate, the multi-layered wiring layer having a plurality of wiring layers insulatively laminated, wherein the melting points of the plurality of wiring layers are set gradually lower in a direction towards the higher-level side.
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申请公布号 |
US5982040(A) |
申请公布日期 |
1999.11.09 |
申请号 |
US19970970199 |
申请日期 |
1997.11.14 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
YAMADA, MASAKI;ANAND, MINAKSHISUNDARAN BALASUBRAMANIAN;SHIBATA, HIDEKI |
分类号 |
H01L21/3205;H01L23/52;H01L23/532;(IPC1-7):H01L23/48;H01L29/40 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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