| 摘要 |
PURPOSE:To obtain manufacture, through which the morphology of an ohmic electrode is improved and thermal stability and distribution in a wafer are enhanced while an improvement in reliabilty is also expected, by activating and annealing an active layer by an ion implantation and high-concentration N type source and drain layers while also activating and annealing a thin-film semiconductor material for the electrode. CONSTITUTION:A resist 8 is patterned in order to form a pattern for a heat- resistant ohmic electrode. Germanium or silicon as a thin-film semiconductor material 9 for a heat-resistant ohmic as the ohmic electrode is evapoated. An ions are implanted to shape a high-concentration N type to the thin-film semiconductor material 9 for the heat-resistant ohmic electrode, the resist 8 is lifted off, and the thin-film semiconductor material 9 for the heat-resistant ohmic electrode is patterned. An active layer 2, the high-concentration layer 5 and the ohmic material 9 by an As implantation layer are annealed simultaneouly in As pressure. Wiring patterns 7 are patterned, and an element is prepared. |
