| 摘要 |
PROBLEM TO BE SOLVED: To form a wiring of a dual damascene structure without using a CMP method. SOLUTION: As shown in Figure A, oxygen is ion-implanted in a copper thin film 11 on an SiO2 layer 2 from the upper surface of the film 11 on the condition that oxygen ions reach a position slightly deeper than a thickness (t1) of the film 11. Thereby, as shown in Figure B, the film 11 on the layer 2 and parts which are located on the upper layer parts of first and second wiring parts 18 and 19 of the film 11 are oxidized, and an oxide layer 13 is formed on the layer 2. Since the specific inductive capacity of the layer 13 is high, the parts 18 and 19 are insulated from each other and it becomes possible to easily obtain a highly reliable wiring structure. |
