| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing device and method, capable of high precisely forming films in thickness close to a specified value on a base substance, as well as prevented from occurring avoiding the production of a large number of defective units. SOLUTION: Although SiO2 films are successively formed in chambers 16a-16d while being carried on a conveyer 14, the thickness to be formed in the chamber 16d is adjusted according to the thickness measured by a film thickness measuring equipment 17a. Accordingly, the SiO2 films close to the specific value can be finally formed. Furthermore, when the thickness measured by the film thickness measuring equipment 17a, 17b is out of a desired range, both the formation of the SiO2 films and the carrying of the semiconductor wafers are stopped, so that the production of a large number of defective units are prevented from occurring. |
